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Partial File Text ï»¿MAY 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ -20V, -7.7A, Rds(on)=25itiQ @Vgs=-4.5V. Rds(on)=35itiQ @Vgs=-2.5V. â¢ Super high dense cell design for extremely low R
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