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Scans-00156867.pdf
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CEM9425 may 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES ⢠-20V, -7.7A, RDS(ON)=30mQ @VGS=-4.5V. Rds(on)=48itQ @Vgs=-2.5V. ⢠Super high dense cell design for extremely
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