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Partial File Text ï»¿AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ -20V, -5.4A, Rds(on)=65itiQ @Vgs=-4.5V. Rds(on)=1 OOmQ @Vgs=-2.5V. â¢ Super high dense cell design for extremely lo
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CEM9433 ON 5134