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Partial File Text ï»¿CEM9945 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ' 60V, 3.3A, Rds(on)=1 00m (1 @ Vgs=1 0V. Rds(on)=200iti Q @Vgs=4.5V. Super high dense cell design for extre
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