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Partial File Text ï»¿CES7002A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 60V, 0.28A, Rds(on)=2Q @Vgs=1 0V. Rds(on)=3Q @Vgs=5V. â¢ High dense cell design for low Rds(on). â¢ Rugg
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