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Partial File Text ï»¿CET453N _March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 30V, 8A, rds(on)=28mQ @ Vgs=1 0V. ftds(on)=42mfl @Vgs=4.5V. â¢ High dense cell design for low Rds(on). â
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8a 817 voltage CET453N