DSAZIHA100083545.pdf by Cree

Partial File Text CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Creeâs CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed spe
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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