DSAZIHA100083617.pdf by Cree

Partial File Text CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Creeâs CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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