DSAZIHA100083624.pdf by Cree

Partial File Text CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Creeâs CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for hig
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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