DSAZIHA100083629.pdf by Cree

Partial File Text CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Creeâs CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed spe
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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