DSAZIHA100083722.pdf by Cree

Partial File Text PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Creeâs CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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