DSAZIHA100083727.pdf by Cree

Partial File Text CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Creeâs CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gai
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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