This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TC58NVG0S3ETA00
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
1 GBIT (128M × 8 BIT) CMOS NAND E PROM
DESCRIPTION
The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256
