DSASW00389410.pdf by Toshiba

Partial File Text TC58NVG2S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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DIN2111 hex latch NAND read disturb TC58NVG2S3E TC58NVG2S3ETA00