DSASW00389564.pdf
by Toshiba
- GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm · Enhancement-mode · Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130
- Original
- Unknown
- Unknown
- End Of Life
- Find it at Findchips.com
