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DSA00237111.pdf
by PanJit International
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PJ6676 25V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES · RDS(ON), VGS@10V,IDS@15A=8m · RDS(ON), VGS@4.5V,IDS@13A=12m · Advanced Trench Process Technology · High Density Cell Design For
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PJ6676
SOIC-08