This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
PJ6676
25V N-Channel Enhancement Mode MOSFET
SOIC-08
FEATURES
· RDS(ON), VGS@10V,IDS@15A=8m
· RDS(ON), VGS@4.5V,IDS@13A=12m
· Advanced Trench Process Technology
· High Density Cell Design For
