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    DSA00237112.pdf by PanJit International

    • PJ6680 25V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES · RDS(ON), VGS@10V,IDS@12A=10m · RDS(ON), VGS@4.5V,IDS@10A=18m · Advanced Trench Process Technology · High Density Cell Design Fo
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    6680 MOSFET PJ6680 SOIC-08
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