DSA00237113.pdf
by PanJit International
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PJ6694
25V N-Channel Enhancement Mode MOSFET
FEATURES
· RDS(ON), VGS@10V,IDS@12A=12m
· RDS(ON), VGS@4.5V,IDS@10A=22m
· Advanced Trench Process Technology
· High Density Cell Design For Ultra Low
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Original
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