This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
PROCESS
CP371
N-Channel MOSFET
Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
55 x 32 MILS
Die Thickness
7.5 MILS
Gate Bonding Pad Area
7.3 x 7.3 MILS
Source Bondin
