DSAZIHA100084792.pdf by Central Semiconductor

Partial File Text PROCESS CP371 N-Channel MOSFET Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 55 x 32 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 7.3 x 7.3 MILS Source Bondin
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RoHS Unknown
Pb Free Unknown
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