DSASW00396528.pdf by Toshiba

Partial File Text 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA · Small package suitable
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

DSASW00396528.pdf preview

Download Datasheet

User Tagged Keywords

Price & Stock Powered by