DSA00102814.pdf by Renesas Technology

Partial File Text RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006 Features · High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% (f = 520 MHz) · Compact package capable o
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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155-8-1 905-170 RQA0004PXDQS RQA0004PXTL-E ZO 103 MA 75 623

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