DSASW00397071.pdf by Toshiba

Partial File Text 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.24V (typ.) @IF = 5mA 0.6±0
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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