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    DSA00116208.pdf

    • Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No second
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    2SK1867 power Junction FET
    Supplyframe Tracking Pixel