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DSA00238548.pdf
by Transys Electronics
Partial File Text
IRF840 Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Le
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100 Amp current 1300 volt diode
100 Amp current 500 volt diode
IRF840
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