2N7002F,215 datasheet by NXP Semiconductors

Description N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.475 A; R<sub>DS(on)</sub>: 2000@10V4000@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Obsolete
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2N7002FT/R 2N7002F

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