2N7002E datasheet by Vishay Siliconix

Description MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:240mA; On-Resistance, Rds(on):3ohm; Package/Case:TO-236; Drain-Source Breakdown Voltage:60V; Gate-Source Voltage:2.5V; Leaded Process Compatible:No RoHS Compliant: No
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Transferred
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2N7002E

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