Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img 2N7002E datasheet by NXP Semiconductors

    • 2N7002E - N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.385 A; RDS(on): 3000@10V4000@4.5V mOhm; VDSmax: 60 V
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
    • Powered by Findchips Logo Findchips

    2N7002E datasheet preview

    2N7002E Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the 2N7002E is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • While the 2N7002E can be used as a switch, it's not ideal for high-frequency signals due to its relatively high capacitance and inductance. For high-frequency applications, consider using a dedicated high-frequency switch or a different MOSFET with lower parasitic capacitance.
    • To ensure the 2N7002E is fully turned on or off, apply a gate-source voltage (Vgs) of at least 4.5V for a logic-level input, and 10V for a standard-level input. Also, ensure the gate drive is strong enough to charge the gate capacitance quickly.
    • The maximum current rating for the 2N7002E is 500mA, but it's recommended to derate the current based on the operating temperature and PCB layout to ensure reliable operation.
    • While the 2N7002E can be used in a linear amplifier circuit, it's not the best choice due to its relatively high drain-source resistance (Rds(on)) and limited linear region. Consider using a dedicated linear amplifier transistor or a MOSFET with a lower Rds(on) and a more linear transfer characteristic.
    Supplyframe Tracking Pixel