2N7002E,215 datasheet
by NXP Semiconductors
- N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.385 A; R<sub>DS(on)</sub>: 3000@10V4000@4.5V mOhm; V<sub>DS</sub>max: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
- Original
- Yes
- Yes
- Obsolete
- Find it at Findchips.com
