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    Part Img 2N7002A-7 datasheet by Diodes Incorporated

    • FETs - Single, Discrete Semiconductor Products, MOSFET N CH 60V 180MA SOT23
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    2N7002A-7 datasheet preview

    2N7002A-7 Frequently Asked Questions (FAQs)

    • The 2N7002A-7 is a low-power MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to 100 kHz.
    • To ensure the 2N7002A-7 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor of 1-10 kΩ can be used to limit the gate current.
    • The maximum power dissipation of the 2N7002A-7 is not explicitly stated in the datasheet. However, based on its thermal resistance (RθJA) and maximum junction temperature (Tj), the maximum power dissipation can be calculated to be around 1.5W.
    • The 2N7002A-7 is a low-power MOSFET with a maximum continuous drain current of 500mA. It is not suitable for high-current applications. For high-current applications, a MOSFET with a higher current rating should be used.
    • To protect the 2N7002A-7 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are grounded, and use ESD-protective packaging and materials.
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