DSASL0024790.pdf by Cree

Partial File Text CGH40120F 120 W, RF Power GaN HEMT Cree's CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general
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RoHS Unknown
Pb Free Unknown
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154-04 CAP 0805 ATC 600F cgh401 CGH4012 CGH40120 cgh40120F CGH40120F-TB