DSA00240947.pdf
by Toshiba
- 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA ยท Small package suitable
- Original
- Yes
- Unknown
- Active
- Find it at Findchips.com
