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DSA0072206.pdf
by Toshiba
Partial File Text
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT60N321 High Power Switching Applications The 4th Generation ยท FRD Included Between Emitter and Gollector
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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