DASF001042.pdf by Toshiba

Partial File Text 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5A (max) : CT = 3.9pF (typ.) Absolute Maximum Ratings
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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