DSA0072739.pdf by Toshiba

Partial File Text GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector E
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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