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DSA00120916.pdf
by International Rectifier
Partial File Text
PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Des
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RoHS
No
Pb Free
Unknown
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1501a
IRFIZ24N
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