DSAIH000158847.pdf by HY Electronic

Partial File Text HY4N65T / HY4N65FT 650V / 4A N-Channel Enhancement Mode MOSFET 650V, RDS(ON)=2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB â¢ Low On-State Resistance â¢ Fast Switching â¢ Low G
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