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T E M IC
Semiconductors
SÌ9956DY
Dual N-Channel Enhancement-Mode MOSFET
P rod uct S u m m a r y
vDS(V)
20 0 .2 0 @ V G s = 4 .5 V ± 2 .0 r DS(on) (OE ) 0 .1 0 @ V GS = 10 V Id
(A)
±