DSA00319645.pdf by Infineon Technologies

Partial File Text BFP650 NPN Silicon Germanium RF Transistor Preliminary data · For high power amplifiers · Ideal for low phase noise oscilators · Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.8 dB a
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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