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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs (X, Ku-Band) Features â¢ High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz â¢ High gain - Â®ldB = 5.0 d
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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