DSAIHSC000104215.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4L Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features â¢ Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Si
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