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TOSHIBA
MICROWAVE POWER GaAs FET
TIM1213-4
Internally Matched Power GaAs FETs (X, Ku-Band)
Features
⢠High power
- PidB = 36.5 dBm at 12.7 GHz to 13.2 GHz
⢠High gain
- G1dB = 7.5 dB a
