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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs (Chip Form) Features â¢ High power - P1dB = 31.5 dBm at f= 15 GHz â¢ High gain - G idB = 6.5 dB a tf = 15 GHz â¢ Suitable for Ku-
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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