DSAIHSC000104227.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET S8853 Power GaAs FETs (Chip Form) Features â¢ High power - P idB = 28 dBm at f= 15 GHz â¢ High gain - GidB = 7 dB at f = 15 GHz â¢ Suitable for Ku-Bar\
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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