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TOSHIBA
MICROWAVE POWER GaAs FET
S8851
Power GaAs FETs (Chip Form)
Features
⢠High power
- PidB = 24 dBm a tf = 15 GHz
⢠High gain
- G-|dB â8 dB at f = 15 GHz
⢠Suitable for Ku-Ba
