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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs (Chip Form) Features â¢ High power - PidB = 24 dBm a tf = 15 GHz â¢ High gain - G-|dB â8 dB at f = 15 GHz â¢ Suitable for Ku-Ba
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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