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TOSHIBA
MICROWAVE POWER GaAs FET
S8835
Power GaAs FETs (Packaged)
Features
⢠High power
- P 1dB = 24 dBm at f = 8 GHz
⢠High gain
- G-,dB = 8 dB at f = 8 GHz
⢠Suitable for C-Band
