DSAIHSC000104257.pdf by Not Available

Partial File Text T O S H IB A MICROWAVE POWER GaAs FET JS8855-AS Power GaAs FETs (Chip Form) Features â¢ High power - P 1dB = 32 dBm at f = 15 G H z â¢ High gain - G idB = 7 dB at f = 15 G H z â¢ Suita
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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