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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs (Chip Form) Features â¢ High power - P-idB = 21.5 dBm at f = 15 GHz â¢ High gain - G1dB = 9 d B a t f = 15 GHz â¢ Suitable f
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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